Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectric

The effects of hafnium oxide $(hbox{HfO}-{2})$ gate dielectric annealing treatment in oxygen $(hbox{O}-{2})$ and ammonia $(hbox{NH}-{3})$ ambient on the electrical performance of polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are investigated. The PTFTs with $hbox{HfO}-{2}$ gate dielectric and also octadecyltrichlorosilane surface modification, prepared by spin-coating process, exhibit good performance, such as a small threshold voltage of $-$0.5 V and an operating voltage as low as $-$4 V. Results indicate that the PTFT with $hbox{NH}-{3}$-annealed $hbox{HfO}-{2}$ shows higher carrier mobility, larger on/off current ratio, smaller subthreshold swing, and lower threshold voltage than the PTFT with $hbox{O}-{2}$-annealed $hbox{HfO}-{2}$. Capacitancevoltage analysis for metal-polymer-oxide-silicon structures indicates that the better electrical performance of the PTFT with $hbox{NH}-{3}$ -annealed $hbox{HfO}-{2}$ is attributed to improved dielectric/polymer interface and reduced series resistance in the transistor. © 2006 IEEE.published_or_final_versio

Bias-stress-induced instability of polymer thin-film transistor based on poly(3-hexylthiophene)

A polymer thin-film transistor (PTFT) based on poly(3-hexylthiophene) (P3HT) is fabricated by a spin-coating process and characterized. Its bias-stress-induced instability during operation is investigated as a function of time and temperature. For negative gate-bias stress, the carrier mobility remains unchanged, the off-state current decreases, and the threshold voltage shifts toward the negative direction. On the other hand, for negative drain-bias stress, the carrier mobility decreases slightly, the off-state current increases, and the threshold voltage shifts toward the positive direction. The threshold shifts under gate- and drain-bias stresses are observed to be logarithmically dependent on time, and the decay rate of the threshold-voltage shift is independent of temperature. The results suggest that the origin of the threshold-voltage shift upon negative gate-bias stress is predominantly associated with holes trapped within the SiO 2 gate dielectric or at the P3HT/SiO 2 interface, while time-dependent charge trapping in the deep trap states and creation of defect states in the channel region are responsible for the drain-bias stress effect on the PTFT. © 2011 IEEE.published_or_final_versio

Content Based Image Retrieval by Convolutional Neural Networks

Hamreras S., Benítez-Rochel R., Boucheham B., Molina-Cabello M.A., López-Rubio E. (2019) Content Based Image Retrieval by Convolutional Neural Networks. In: Ferrández Vicente J., Álvarez-Sánchez J., de la Paz López F., Toledo Moreo J., Adeli H. (eds) From Bioinspired Systems and Biomedical Applications to Machine Learning. IWINAC 2019. Lecture Notes in Computer Science, vol 11487. Springer.In this paper, we present a Convolutional Neural Network (CNN) for feature extraction in Content based Image Retrieval (CBIR). The proposed CNN aims at reducing the semantic gap between low level and high-level features. Thus, improving retrieval results. Our CNN is the result of a transfer learning technique using Alexnet pretrained network. It learns how to extract representative features from a learning database and then uses this knowledge in query feature extraction. Experimentations performed on Wang (Corel 1K) database show a significant improvement in terms of precision over the state of the art classic approaches.Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech

Impact of Increased Economic Burden Due to Human Echinococcosis in an Underdeveloped Rural Community of the People's Republic of China

This paper compares medical expenditure for hospital treatment of echinococcosis in NHAR, western People's Republic of China, for different years, different regions and different socioeconomic groups. The results show that the level of household income strongly influences health care decisions. This study represents an effort to determine the effect of hospital charges for inpatient treatment of echinococcosis on the choice of provider in NHAR, and quantitatively examines this topic for the rural poor. The findings show that low income individuals from rural areas opted to visit a local county hospital rather than an urban hospital for hydatid surgery despite the inferior infrastructure, personnel and general health care facilities available. There are a number of policy implications. For example, enhancing the quality and service of county hospitals in rural areas will benefit those with lower incomes, thus improving access of rural residents to health facilities for higher quality diagnosis and efficient treatment. Thus, we advocate that government policy should be to increase investment in health care in poor rural areas, and to launch relevant medical aid projects to help those in poverty

Improved performance of pentacene OTFTs with HfLaO gate dielectric by using fluorination and nitridation

Pentacene organic thin-film transistors (OTFTs) with fluorinated high-κ HfLaO as gate insulator were fabricated. The dielectrics were prepared by sputtering method and then annealed in N 2 or NH 3 at 400 °C. Subsequently, the dielectrics were treated by fluorine plasma for different durations (100, 300, and 900 s). The N 2 and NH 3-annealed OTFTs with a 100-s plasma treatment achieve a carrier mobility of 0.62 and 0.66 cm 2V̇s, respectively, which are higher than those of the OTFTs without plasma treatment (0.22 and 0.41 cm 2V̇s). Moreover, the plasma-treated OTFTs realize better 1/f noise characteristics than those without plasma treatment. The improved performance is due to passivation of the dielectric surface by plasma-induced fluorine incorporation. However, for longer time (300 and 900 s) of plasma treatment, the performance of the OTFTs deteriorates in terms of carrier mobility and 1/f noise characteristics due to increased plasma-induced damage of the dielectric surface. The morphology of the pentacene film grown on the HfLaO gate insulator was characterized by SEM. It reveals that the pentacene film has larger grain size and smoother surface on the HfLaO dielectric (for both annealing gases) with 100-s plasma treatment than the others (0, 300, and 900 s). Finally, AFM characterization of the HfLaO film also confirms the damaging effect of excessive plasma treatment on the dielectric. © 2012 IEEE.published_or_final_versio

Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2

OTFTs with P3HT as organic semiconductor and HfTiO as gate dielectric have been studied in this work. The HfTiO dielectric film was prepared by RF sputtering of Hf and DC sputtering of Ti at room temperature. Subsequently, the dielectric film was annealed in an NH3 or N2 ambient at 200 °C. Then a layer of OTS was deposited by spin-coating method to improve the surface characteristics of the gate dielectric. Afterwards, P3HT was deposited by spin-coating method. The OTFTs were characterized by I-V measurement and 1/f noise measurement. The OTFT with gate dielectric annealed in NH3 displays higher carrier mobility, smaller threshold voltage, smaller sub-threshold swing, and lower 1/f noise level than the OTFT annealed in N2. Moreover, the HfTiO dielectric film annealed in NH3 shows higher dielectric constant. In summary, HfTiO film annealed in NH 3 at low temperature is a promising candidate to act as the gate dielectric of high-quality low-voltage OTFTs. ©2009 IEEE.published_or_final_versionThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 201-20

β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes

A four-terminal photodetector was fabricated on the (2⎯⎯⎯012¯01)-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection.published_or_final_versio

Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer

Metal-oxide-semiconductor (MOS) capacitor with HfTiONHfSiON stack structure as high- k gate dielectric is fabricated, and its electrical properties are compared with those of a similar device with HfTiON only as gate dielectric. Experimental results show that the device with HfTiONHfSiON gate dielectric exhibits better interface properties, lower gate leakage current, and enhanced high-field reliability. All these improvements should be attributed to the fact that the HfSiON buffer layer effectively blocks the diffusion of Ti atoms to the Si substrate, thus resulting in a Si O2 Si -like HfSiONSi interface. © 2007 American Institute of Physics.published_or_final_versio

Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric

Pentacene organic thin-film transistors (OTFTs) with high-κ HfLaO as gate insulator were fabricated. HfLaO film was prepared by sputtering method. To improve the film quality, the dielectric was annealed in N 2, NH 3, or O 2 at two temperatures, i.e., 200 °C and 400 °C, respectively. The I-V characteristics of the OTFTs and C-V characteristics of corresponding organic capacitors were measured. The OTFTs could operate at a low operating voltage of below 5 V, and the dielectric constant of the HfLaO film could be above ten. For all the annealing gases, the OTFTs annealed at 400 °C achieved higher carrier mobility than their counterparts annealed at 200 °C (with the one annealed in NH 3 at 400 °C showing the highest carrier mobility of 0.45 cm 2/ V·s), which could be supported by SEM images which indicate that pentacene tended to form larger grains on HfLaO annealed at 400 °C than on that annealed at 200 °C. The C-V measurement of the organic capacitors indicated that the localized charge density in the organic semiconductor/oxide was lower for the 400 °C annealing than for the 200 °C annealing. Furthermore, through the characterization of gate current leakage, HfLaO film annealed at 400 °C achieved much smaller leakage than that annealed at 200 °C. Since the maximum processing temperature of ITO glass substrates is around 400 °C , this study shows that 400 °C is suitable for the annealing of HfLaO film in high-performance OTFTs on glass substrate. © 2011 IEEE.published_or_final_versio

Characterization of implementation limits and identification of optimization strategies for sustainable water resource recovery through life cycle impact analysis

This is the final version. Available from Elsevier via the DOI in this record.How we manage alternative freshwater resources to close the gap between water supply and demand is pivotal to the future of the environment and human well-being. Increased scarcity of water for agricultural irrigation in semi-arid and arid regions has resulted in a growing interest in water reuse practices. However, insight into the life cycle impacts and potential trade-offs of these emerging practices are still limited by the paucity of systematic evaluations of different water reuse implementations. In this study, a host of environmental and human health impacts at three implementation levels of allowing water reclamation for crop irrigation was comparatively evaluated across the operational landscape via a combination of scenario modelling, life-cycle impact analyses and Monte Carlo simulations. Net harvesting of reclaimed water for irrigation was found to be dependent upon the sophistication of the treatment processes, since multistage and complex configurations can cause greater direct water consumption during processing. Further, the direct benefits of water resource recovery can be essentially offset by indirect adverse impacts, such as mineral depletion, global warming, ozone depletion, ecotoxicity, and human health risks, which are associated with increased usage of energy and chemicals for rigorous removal of contaminants, such as heavy metals and contaminants of emerging concern. Nonetheless, expanded simulations suggest the significance of concurrently implementing energy recovery, nutrient recycling, and/or nature-based, chemical-free water technologies to reduce the magnitude of negative impacts from engineered water reclamation processes.Royal Society (Charity)Beijing Talents FoundationBeijing Nova Program, ChinaNational Natural Science Foundation of ChinaYouth Innovation Promotion Association of the Chinese Academy of Science